Semiconductor integrated circuit device and a method of manufacturing the same

ABSTRACT

In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

The present application is a continuation of U.S. application Ser. No.11/444,316, filed Jun. 1, 2006, which, in turn, is a continuation ofU.S. application Ser. No. 10/263,829, filed Oct. 4, 2002, and now U.S.Pat. No. 7,095,120; and the entire disclosures of which are herebyincorporated by reference.

CROSS-REFERENCE OF RELATED APPLICATIONS

U.S. application Ser. No. 10/327,024, filed Dec. 24, 2002, now U.S. Pat.No. 7,018,919, is related to the present application in that it wasfiled as a separate continuation of the same original patent applicationas that of the present application.

TECHNICAL FIELD

The present invention relates to a semiconductor integrated circuitdevice; and, more particularly, the invention relates to a techniquethat is effective when applied to the formation of a connector portionbetween interconnects in a semiconductor integrated circuit device.

BACKGROUND OF THE INVENTION

With a recent tendency toward miniaturization of interconnects andmultilevel metallization in a semiconductor integrated circuit device, aso-called damascene technique for use in the formation of interconnectsor the like, by forming a trench in an insulating film and thenembedding a conductive film inside of the trench, has been underinvestigation.

This damascene technique includes a single damascene method of embeddinga trench for an interconnect and a trench for connecting betweeninterconnects by two different steps and a dual damascene method ofsimultaneously embedding these two trenches. As a conductive film to beembedded in these trenches, a copper film or the like having a smallelectrical resistance is used.

Inside of the trench, a conductive film having a barrier property (whichwill hereinafter be called a “barrier film”) is formed in order toprevent diffusion of a metal into an insulating film, such as the copperconstituting the conductive film to be embedded, or in order to improvethe adhesion between the conductive film to be embedded and theinsulating film.

For instance, in NIKKEI MICRODEVICES, PP 65 to 66 (July, 2000), it ispointed out as a problem that, upon formation of an underlying film onthe inside wall of a hole by sputtering, sputter particles move easilyat the peripheral part of a wafer, thereby deteriorating the ability touniformly cover the holes.

SUMMARY OF THE INVENTION

The present inventors have carried out an investigation on ways toeffect an improvement in the reliability of interconnects or the likeformed by the damascene technique and have found that the reliability ofthe damascene wiring has a close relation to the way the barrier filmhas adhered inside of the trench.

More specifically, the barrier film is required to have a sufficientthickness in order to prevent diffusion of a metal in an insulatingfilm, such as the copper constituting a conductive film to be embeddedin a trench, and to improve adhesion of the conductive film to beembedded in the trench with the insulating film.

When the barrier film has a poor coverage property, the thickness of thebarrier film varies on the bottom or sidewalls of the trench. If theentire barrier film is formed to be thick so as to prevent suchunevenness, the aspect ratio of a hole to be embedded with a conductivefilm becomes large, causing an embedding failure of the conductive film.

The barrier film has a higher electrical resistance than the conductivefilm to be embedded in the trench. If the barrier film is madeexcessively thick, the electrical resistance of an interconnect orconnector portion becomes large, thereby disturbing high-speed operationof a semiconductor integrated circuit device.

The barrier film is thus required to have a thickness not greater than apredetermined thickness. If some portions of the barrier film are thinowing to uneven thickness, they provide a current pathway because asmaller resistance exists at these portions. Particularly at contactholes, if the shortest distance of a current pathway and such a portioncoincide with each other, a concentration of electrons occurs. As aresult, so-called electromigration, that is, attraction of metal atomsfrom such portions by electrons occurs. Voids appear at portions afterthe metal atoms have been transferred, and a connection failure ordisconnection occurs.

An object of the present invention is to optimize the structure of aconnector portion for connecting interconnects, thereby improving theelectromigration properties.

Another object of the present invention is to optimize the structure ofa barrier film at a connector portion between interconnects, therebyimproving the characteristics of a semiconductor integrated circuitdevice.

The above-described objects and other objects, advantages and novelfeatures of the present invention will be apparent from the descriptionherein and the accompanying drawings.

An outline of typical aspects of the invention, among the embodimentsdisclosed in the present application, will next be described briefly.

(1) In one aspect of the present invention, there is provided asemiconductor integrated circuit device which has a hole made in aninsulating film formed over a semiconductor substrate; a firstconductive film formed on the bottom and sidewalls of the hole, whichfilm has a film thickness increasing from the center of the bottomtoward the sidewalls of the hole; and a second conductive film that isformed over the first conductive film and embedded inside of the hole.

(2) In another aspect of the present invention, there is provided asemiconductor integrated circuit device which has a hole made in aninsulating film formed over a semiconductor substrate; a firstconductive film formed on the bottom and sidewalls of the hole, whichfilm is smaller in film thickness B at the center of the bottom of thehole than in film thickness A corresponding to a perpendicular lineextending toward the bottom of the hole from the shortest point from thecorner of the bottom of the hole to the surface of the first conductivefilm; and a second conductive film that is formed over the firstconductive film and embedded inside of the hole.

(3) In a further aspect of the present invention, there is provided asemiconductor integrated circuit device which has a hole made in aninsulating film formed over a semiconductor substrate; a firstconductive film formed on the bottom and sidewalls of the hole, whichfilm has an electrical resistance lower at the center of the bottom ofthe hole than at a portion corresponding to a perpendicular lineextending toward the bottom of the hole from the shortest point from thecorner of the bottom of the hole to the surface of the first conductivefilm; and a second conductive film that is formed over the firstconductive film and embedded inside of the hole.

(4) In a still further aspect of the present invention, there isprovided a semiconductor integrated circuit device which has a firstinterconnect formed over a semiconductor substrate; a hole which is madein an insulating film formed over the first interconnect and having abottom from which the first interconnect is exposed; a first conductivefilm formed on the bottom and sidewalls of the hole; a second conductivefilm formed over the first conductive film and embedded inside of thehole; and a second interconnect formed over the second conductive film,wherein a site at which a shortest pathway from the first interconnectto the second interconnect through the first and second conductive filmscuts across the first conductive film does not coincide with the lowestelectrical resistance site of the first conductive film.

(5) In a still further aspect of the present invention, there isprovided a semiconductor integrated circuit device, which comprises afirst interconnect formed over a semiconductor substrate, an insulatingfilm formed over the first interconnect, a hole which is made in thefirst interconnect and the insulating film and has a bottom positioneddeeper than the surface of the first interconnect, a first conductivefilm which is formed on the bottom and sidewalls of the hole and isgreater in the film thickness E of the sidewall portion of the holecontiguous to the surface of the first interconnect than in the filmthickness B at the center of the bottom of the hole, and a secondconductive film that is formed over the first conductive film and isembedded therewith inside of the hole.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a fragmentary cross-sectional view of a substrate illustratinga manufacturing method of a semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 2 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 3 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 4 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 5 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 6 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 7 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 8 is a fragmentary cross-sectional view of a substrate illustratingthe manufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 9 is a fragmentary cross-sectional view of a substrate of thesemiconductor integrated circuit device for showing the effects of theEmbodiment 1 of the present invention;

FIG. 10 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 11 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 12 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 13 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 14 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 15 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 16 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 17 is a fragmentary cross-sectional view of a substrate of thesemiconductor integrated circuit device illustrating the effect ofEmbodiment 1 of the present invention;

FIG. 18 is a fragmentary cross-sectional view of a substrate of thesemiconductor integrated circuit device illustrating the effect ofEmbodiment 1 of the present invention;

FIG. 19 is a fragmentary cross-sectional view of a substrate of thesemiconductor integrated circuit device illustrating the effect ofEmbodiment 1 of the present invention;

FIG. 20( a) is a fragmentary plan view of a substrate illustrating themanufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention, and FIG. 20( b) isits fragmentary cross-sectional view;

FIG. 21( a) is a fragmentary plan view of a substrate illustrating themanufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention, and FIG. 21( b) isits fragmentary cross-sectional view;

FIG. 22( a) is a fragmentary plan view of a substrate illustrating themanufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention, and FIG. 22( b) isits fragmentary cross-sectional view;

FIG. 23( a) is a fragmentary plan view of a substrate illustrating themanufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention, and FIG. 23( b) isits fragmentary cross-sectional view;

FIG. 24( a) is a fragmentary plan view of a substrate of thesemiconductor integrated circuit device illustrating the effect ofEmbodiment 1 of the present invention, and FIG. 24( b) is itsfragmentary cross-sectional view;

FIG. 25( a) is a fragmentary plan view of a substrate illustrating thesemiconductor integrated circuit device according to Embodiment 1 of thepresent invention, and FIG. 25( b) is its fragmentary cross-sectionalview;

FIG. 26 is a fragmentary plan view of a substrate illustrating themanufacturing method of the semiconductor integrated circuit deviceaccording to Embodiment 1 of the present invention;

FIG. 27 is a schematic view illustrating an apparatus used formanufacturing the semiconductor integrated circuit device according toEmbodiment 1 of the present invention;

FIG. 28 is a graph showing an effect of Embodiment 1 of the presentinvention;

FIG. 29 is a graph showing another effect of Embodiment 1 of the presentinvention;

FIG. 30 is a graph showing a further effect of Embodiment 1 of thepresent invention;

FIG. 31 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 32 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention;

FIG. 33 is a fragmentary cross-sectional view of a substrateillustrating a manufacturing method of a semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 34 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 35 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 36 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 37 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 38 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 39 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 40 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 41 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 42 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 2 of the present invention;

FIG. 43 is a fragmentary cross-sectional view of a substrateillustrating a manufacturing method of a semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 44 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 45 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 46 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 47 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 48 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 49 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 50 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention;

FIG. 51 is a fragmentary cross-sectional view of a substrateillustrating the manufacturing method of the semiconductor integratedcircuit device according to Embodiment 3 of the present invention; and

FIG. 52 is a fragmentary cross-sectional view of a substrate of thesemiconductor integrated circuit device showing the effect of Embodiment3 of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Various embodiments of the present invention will be describedhereinafter with reference to the accompanying drawings. In all thedrawings, members having like functions will be identified by likereference numerals, and overlapping descriptions thereof will be omitted

Embodiment 1

The semiconductor integrated circuit device according to one Embodimentof the present invention will be described in accordance with its methodof manufacture. FIGS. 1 to 18, 20 to 26, 31 and 32 are fragmentarycross-sectional or fragmentary plan views of a substrate forillustrating the method of manufacture of the semiconductor integratedcircuit device according to Embodiment 1 of the present invention.

First, as illustrated in FIG. 1, an n channel MISFET (Metal InsulatorSemiconductor Field Effect Transistor) Qn and a p channel MISFETQp areformed as one example of a semiconductor element. One example of theprocess used in the formation of these MISFET will be described next.

A semiconductor substrate 1 made of, for example, p type single crystalsilicon is etched to form a trench therein. An insulating film, forexample, a silicon oxide film 7 is then embedded inside of the trench,whereby an isolation region 2 is formed. This isolation region 2 definesan active region in which the MISFET is to be formed.

After ion implantation of a p type impurity and an n type impurity intothe semiconductor substrate (which will hereinafter simply be called a“substrate”) 1, these impurities are diffused by heat treatment to forma p type well 3 and an n type well 4. By thermal oxidation, a clean gateinsulating film 8 is formed over the surface of each of the p type well3 and n type well 4.

Over the gate insulating film 8, a low-resistance polycrystallinesilicon film 9 a, a thin WN (tungsten nitride) film (not illustrated)and a W (tungsten) film 9 c are deposited successively as conductivefilms, followed by deposition of a silicon nitride film 10 thereover toserve as an insulating film.

The silicon nitride film 10 is then etched by dry etching or the like soas to leave it in a region in which a gate electrode is to be formed.Using the remaining silicon nitride film 10 as a mask, the W film 9 c,WN film (not illustrated) and polycrystalline film 9 a are etched by dryetching or the like, whereby a gate electrode 9, that is formed of thepolycrystalline film 9 a, WN film (not illustrated) and W film 9 c, isformed.

By ion implantation of an n type impurity into the p type well 3,extending to both sides of the gate electrode 9 n⁻ type semiconductorregions 11 are formed, while ion implantation of a p type impurity intothe n type well 4 is performed to form p⁻ type semiconductor regions 12.

A silicon nitride film is then deposited over the substrate 1 to serveas an insulating film, followed by anisotropic etching, whereby sidewallspacers 13 are formed on the sidewalls of the gate electrode 9.

By ion implantation of an n type impurity to the p type well 3, n⁺ typesemiconductor regions 14 (source and drain), having a higher impurityconcentration than the n⁻ type semiconductor regions 11, are formed;while, by ion implantation of a p type impurity to the n type well 4, p⁺type semiconductor regions 15 (source and drain), having a higherimpurity concentration than the p⁻ type semiconductor regions 12, areformed.

By the steps so far described, the n channel type MISFETQn and p channeltype MISFETQp, having an LDD (Lightly Doped Drain) structure and beingequipped with a source and a drain, are formed.

Next, an interconnect will be formed for electrically connecting theMISFETQn and MISFETQp. Steps for forming this interconnect will bedescribed next.

First, as illustrated in FIG. 1, a silicon oxide film is deposited, toserve as an insulating film, over the MISFETQn and MISFETQp by CVD(Chemical Vapor Deposition). The surface of the silicon oxide film isthen polished by chemical mechanical polishing (CMP) to planarize thesurface, whereby an interlayer insulating film TH1 is formed.

Over the interlayer insulating film TH1, a photoresist film (notillustrated is formed). This film will hereinafter simply be called a“resist film”. Using this resist film as a mask, the interlayerinsulating film TH1 is etched to form a contact hole C1 over each of then⁺ type semiconductor regions 14 and p⁺ type semiconductor regions 15over the main surface of the semiconductor substrate 1.

A plug P1 is then formed in the contact hole C1 by depositing, over theinterlayer insulating film TH1, including the inside of the contact holeC1, a tungsten (W) film to serve as a conductive film by CVD, and thenthis tungsten film is polished by CMP until the interlayer insulatingfilm TH1 is exposed. Alternatively, this plug P1 may be formed to have alaminate structure of a barrier film—which has a single layer of atitanium nitride (TiN) film or a titanium (Ti) film, or a laminate filmthereof—and a tungsten film.

As illustrated in FIG. 2, a silicon nitride film H1 a, serving as anetching stopper, and a silicon oxide film H1 b are depositedsuccessively by CVD to serve as an insulating film over the interlayerinsulating film TH1 and plug P1, whereby an interconnect-trench-forminginsulating film H1 made of these films is formed. Theinterconnect-trench-forming insulating film H1, in a region in which afirst-level interconnect is to be formed, is etched to form aninterconnect trench HM1. Instead of the silicon oxide film H1 b, asilicon oxide film containing fluorine (F) may be used as an insulatingfilm having a low dielectric constant. Another insulating film having alow dielectric constant or a coating type insulating film is alsousable. The silicon nitride film H1 a is utilized as an etching stopperduring the above-described etching.

Over the interconnect-trench-forming insulating film H1, including theinside of the interconnect trench HM1, a barrier film M1 a made oftitanium nitride is deposited by sputtering. Then, a copper film M1 b,serving as a conductive film, is formed over the barrier film M1 a byelectroplating. Prior to the formation of the copper film M1 b byelectroplating, a thin copper film may be formed by sputtering or CVD asa seed film for the electroplating.

After heat treatment of the copper film M1 b, the copper film M1 b andbarrier film M1 a outside of the interconnect trench HM1 are removed byCMP, whereby a first-level interconnect M1 is formed, having the copperfilm M1 and barrier film M1 a.

As illustrated in FIG. 3, a silicon nitride film TH2 a, a silicon oxidefilm TH2 b, a silicon nitride film TH2 c and a silicon oxide film TH2 dare deposited successively, to serve as insulating films, by CVD overthe first-level interconnect M1, whereby an interlayer insulating filmTH2 is formed. Among these films, the silicon nitride film TH2 a has afunction of preventing diffusion of copper, which constitutes thefirst-level interconnect M1. The silicon nitride film TH2 a can bereplaced with another insulating film so long as that film has a Cudiffusion preventing function. The silicon nitride film TH2 a is used asan etching stopper upon formation of a contact hole C2, which will bedescribed later. The silicon nitride film TH2 c is utilized as anetching stopper upon formation of an interconnect trench HM2, which willbe described later.

Over the interlayer insulating film TH2, a resist film (notillustrated), that is opened at a region in which a second-levelinterconnect is to be formed, is formed. Using this resist film as amask, the silicon oxide film TH2 d and silicon nitride film TH2 c areetched from the interlayer insulating film TH2 to form the interconnecttrench HM2.

Over the interlayer insulating film TH2, including the inside of theinterconnect trench HM2, a first resist film (not illustrated) isdeposited. The interconnect trench HM2 is embedded with the first resistfilm by etch back. A second resist film (not illustrated), that isopened at a connecting region of the first-level interconnect, with thesecond-level interconnect is then formed over the first resist film.Using this second resist film as a mask, the first resist film, thesilicon oxide film TH2 b and silicon nitride film TH2 a are etched,whereby the contact hole C2 is formed.

Here, the formation of the interconnect trench HM2 is followed by theformation of the contact hole C2. Alternatively, after formation of thecontact hole C2 by etching the silicon nitride film TH2 a, silicon oxidefilm TH2 b, silicon nitride film TH2 c and silicon oxide film TH2 d froma connecting region of the first-level interconnect with thesecond-level interconnect, the interconnect trench HM2 may be formed byetching the silicon oxide film TH2 d and silicon nitride film TH2 c froma region in which the second interlevel interconnect is to be formed.

As illustrated in FIG. 4, over the interlayer insulating film TH2,including the insides of the contact hole 2C and interconnect trenchHM2, the below-described refractory metal, such as titanium (Ti), isdeposited to form a barrier film PM2 a. As the refractory metal, atleast one of or an alloy of titanium, tantalum (Ta), tantalum nitride(TaN), titanium nitride (TiN), tungsten (W), tungsten nitride, titaniumsilicide nitride and tungsten silicide nitride is usable. It is alsopossible to use a laminate film obtained by stacking the above-describedfilms one upon another.

At this time, the barrier film PM2 a is formed to have a structure asdescribed below.

FIGS. 5 and 7 are enlarged views of the vicinity of the contact hole C2,which is the right-most one of three contact holes C2, as seen in FIG.4. FIG. 6 is a fragmentary plan view of the substrate illustrated inFIG. 5 or FIG. 7. FIG. 5 corresponds to the cross-section taken along aline A-A of FIG. 6, while FIG. 7 corresponds to the cross-section takenalong a line B-B of FIG. 6. Although no particular limitation isimposed, the width of the interconnect trench HM2 is formed to besubstantially equal to that of the interconnect trench HM1 in thisEmbodiment. In FIG. 6, however, the width of the interconnect trench HM1is illustrated as being smaller than that of the interconnect trench HM2in order to facilitate observation of the elements in the drawing.

As illustrated in FIGS. 5 and 7, the barrier film PM2 a is formed alongthe bottom and sidewalls of the interconnect trench HM2 and the contacthole C2.

In the contact hole C2, the barrier film PM2 a on the bottom thereof isformed so that its thickness increases from the center of the bottomtoward the sidewalls. This increase in thickness of the barrier film PM2a on the bottom of the contact hole C2, from the center of the bottomtoward the sidewalls, is applied all around the bottom. As illustratedin FIG. 8, which is a partially enlarged view of the bottom of thecontact hole C2 shown in FIG. 7, the thickness of the barrier film atthe center of the bottom of the contact hole C2 is B, and the filmthickness A, which is a film thickness of the end portion, in thedirection of the sidewalls, of the bottom of the contact hole C2, ismade greater than the film thickness B (A≧B). Moreover, the filmthickness C, which is a film thickness on the sidewalls at a bottomportion of the contact hole C2, is made greater than the film thicknessB (C≧B).

The film thickness B or the film thickness D, which is a film thicknessof the barrier film at the upper portion of each of the sidewalls of thecontact hole C2, is formed to be at least the minimum thicknesspermitting maintenance of barrier properties. Below the barrier film PM2a on the bottom of the contact hole C2, the first-level interconnect M1is formed, so that the barrier film PM2 a at such a position is notalways required to have a film thickness large enough to maintainbarrier properties. As illustrated in FIG. 9, however, sometimesmisalignment occurs between the first-level interconnect M1 and thecontact hole C2 due to mask misalignment. The film thickness B istherefore desirably adjusted to at least the minimum film thicknesspermitting maintenance of barrier properties. In FIG. 9, PM2 b and PM2 care copper films (their boundary is not illustrated in the drawing) overthe barrier film PM2 a. TH3 a and TH3 b are insulating films over thecopper films (PM2 b,PM2 c).

As illustrated in FIG. 10, after formation of a copper film PM2 b, toserve as a seed film for electroplating, over the barrier film PM2 a bysputtering or CVD, a copper film PM2 c is formed, to serve as aconductive film, over the copper film PM2 b by electroplating.

After heat treatment of the copper films PM2 b and PM2 c, the copperfilms PM2 b, PM2 c and barrier film PM2 a outside the interconnecttrench HM2 and the contact hole C2 are removed by CMP to form asecond-level interconnect M2 and a connector portion (plug) P2 betweenthe first-level interconnect, and the second-level interconnect asillustrated in FIG. 11. FIGS. 12 and 13 are enlarged views of thevicinity of the contact hole C2 in FIG. 11. FIGS. 12 and 13 correspondto the A-A cross-sectional view and B-B cross-sectional view in FIG. 6,respectively.

The essential points in the structure of the second-level interconnectM2, connector portion (plug) P2 and first-level interconnect M1 will bedescribed briefly.

The second-level interconnect M2 and connector portion (plug) P2 areeach made of the copper films PM2 b, PM2 c and barrier film PM2 a. Asillustrated in FIG. 12, the second-level interconnect M2 extends to theleft side, starting from the connector portion (plug) 2, while thefirst-level interconnect M1 extends to the right side, starting from theconnector portion (plug) P2.

As described above, the barrier film PM2 a on the bottom of the contacthole C2 increases in thickness from the center of the bottom toward thesidewalls. In other words, the barrier film PM2 a has a portion whichdeclines towards the center of the bottom from the sidewalls of thecontact hole C2. As illustrated in FIG. 14, which is a partiallyenlarged view of the bottom of the contact hole C2 shown in FIG. 13, thefilm thickness B of the barrier film PM2 a on the center of the bottomof the contact hole C2 is smaller than the film thickness A, which isthe film thickness, at the end portion in the direction of thesidewalls, on the bottom of the contact hole C2 (A≧B). The filmthickness A can be determined, for example, by dropping a perpendicularline toward the bottom of the contact hole C2 from the end of theshortest distance L between from the corner of the bottom of the contacthole C2 to the surface of the barrier film PM2 a.

The actual surface of the barrier film, as illustrated in FIG. 15, iscurved at the corner of the bottom of the contact hole C2. When thecontact hole C2 has a curved corner, the above-described shortestdistance L can be determined by using, as a starting point, theintersection between the extension of the side line of the contact holeC2 and the extension of the bottom line.

In the case where electric current (i) flows from the second-levelinterconnect M2 to the first-level interconnect M1 via such a connectorportion (plug) P2, electrons (e) flow, as illustrated in FIG. 17,through a route Ru1, which extends from the lower right to the upperleft of the connector portion (plug) P2, because this route becomes thegeometrically shortest route. Electrons (e) flow, as illustrated in FIG.18, toward the first-level interconnect M1 via the center of theconnector portion (plug) P2, because the electrical resistance of a thinportion of the barrier film PM2 a becomes lowest.

According to this Embodiment, the geometrically shortest route (routeRul) of electric current from the second-level interconnect M2 to thefirst-level interconnect M1 does not coincide with a thin portion of thebarrier film PM2 a at which the electrical resistance becomes lowest, sothat a current route can be dispersed. Accordingly, a concentration ofelectrons (e) does not occur easily, making it possible to improve theelectromigration properties.

As illustrated in FIG. 19, upon formation of the barrier film PM2 a′,variations in film thickness appear inside of the contact hole C2.Variations are particularly large when the film is formed by sputtering,because the manner in which sputter particles (Ti particles, in thiscase) that are scattered from a target enter the contact holes C2differs, depending on the position of the contact hole on the wafer.

When the contact hole exists on the left edge of the wafer, the barrierfilm PM2 a′ is formed so as to be thick on the left sidewall of thecontact hole C2 and is formed so as to be thin on its right sidewall asillustrated in FIG. 19. On the bottom of the contact hole C2, the filmthickness exhibits a gradual decrease from the left side toward theright side. Since, in the contact hole on the left end of the wafer,sputter particles coming from the right direction enter more easily thanthose coming from the left direction, the barrier film PM2 a′ is formedso as to be thick on the left sidewall or left side of the bottomopposite to the direction of movement of the sputter particles. When thecontact hole exists on the right end of the wafer, on the other hand,the barrier film is formed so as to be thick on the right sidewall orright side of the bottom of the contact hole (refer to FIG. 1( a) of theabove-described NIKKEI MICRODEVICES, p. 65 (July 2000)).

When an electric current flows from the second-level interconnect M2 tothe first-level interconnect M1 through the connector portion (plug) P2,as illustrated in FIG. 19, a pathway via the route Ru1 extending fromthe upper left toward the lower right of the connector portion (plug) P2becomes the geometrically shortest route. At the same time, a thinportion of the barrier film exists in the lower right of the connectorportion (plug) P2. A concentration of electrons (e) therefore occurs atsuch a portion. Electrons which pass through the above-described portionattract copper atoms constituting a copper film; and, with this portionas a starting point, peeling occurs at the interface between the copperfilms (PM2 b,PM2 c) and the barrier film PM2 a′. If the electric currentis continuously passed, the transfer of copper becomes large, therebyforming a void, which becomes a cause of disconnection. Such aphenomenon involving the transfer of metal atoms by momentum exchangebetween electrons flowing through a conductor and metal ions is calledelectromigration.

As described above, when the barrier film PM2 a′ has a shape asillustrated in FIG. 19, the geometrically shortest route Ru1 of electriccurrent crosses over a thin portion (a portion whose electricalresistance becomes lowest) of the barrier film, causing a deteriorationin the electromigration properties.

In this Embodiment, on the other hand, the barrier film PM2 a on thebottom of the contact hole C2 is formed to have a thickness increasingfrom the center of the bottom toward the sidewalls. The geometricallyshortest route Ru1 of electric current, therefore, does not cross over athin portion (a portion whose electrical resistance becomes lowest) ofthe barrier film, thereby preventing a concentration of electrons tothis portion. As a result, improvement in electromigration propertiescan be attained.

In this Embodiment, as illustrated in FIGS. 12 and 13, the barrier filmPM2 a on the bottom of the contact hole C2 is formed to have a thicknessincreasing from the center of the bottom toward the sidewalls, allaround the bottom of the contact hole C2, so that the above-describedeffect is available even if the first-level interconnect M1 extends inany direction relative to the second-level interconnect M2.

More specifically, as illustrated in FIGS. 20( a) to 23(b), thefirst-level interconnect M1 and the second-level interconnect M2 formvarious angles. For example, FIGS. 20( a), 21(a), 22(a) and 23(a)illustrate the cases where the angles formed between them are 180°,0(360)°, 90°, and 270°, respectively. Each of FIGS. 20( a), 21(a), 22(a)and 23(a) illustrate the relationship between the pattern of thefirst-level interconnect M1 and the pattern of the second-levelinterconnect M2.

An increase in the thickness of the barrier film PM2 a from the centerof the bottom toward the sidewalls, all around the bottom of the contacthole C2, as in this Embodiment, makes it possible to improve theelectromigration properties as illustrated in FIGS. 20( a) to 23(b)irrespective of the angle formed between the pattern of the first-levelinterconnect M1 and the pattern of the second-level interconnect M2. Ofcourse, the angle formed between the pattern of the first-levelinterconnect M1 and the pattern of the second-level interconnect M2 isnot limited to the angles shown in FIGS. 20( a) to 23(b). Even when thepattern of the first-level interconnect M1 and the pattern of thesecond-level interconnect M2 cross diagonally, a improvement can beachieved. When the barrier film PM2 a is formed so as to be thick onlyon the left side of the contact hole C2, as illustrated in FIG. 19, onthe other hand, a deterioration in the electromigration propertiesoccurs, in among extending directions of the first-level interconnects(a1) to (d1), in directions (a1,c1,d1) other than the left direction(b1). For facilitating an understanding of the effect of thisEmbodiment, FIG. 24( a) is a plan view illustrating the pattern of thefirst-level interconnect M1 and FIG. 24( b) is a cross-sectional viewtaken along a line C-C in FIG. 24( a).

According to this Embodiment, as illustrated in FIG. 25( a) and FIG. 25(b), even in the case where two interlevel interconnects M1 extend in thedirections (a1) and (b1) or (c1), and (a2) and (b2) or (c2),respectively, relative to the second-level interconnect M2, theabove-described effect is available because the film thickness isincreased from the center of the bottom toward the sidewalls all aroundthe bottom of the contact hole C2. FIGS. 25( a) and 25(b) are providedfor facilitating an understanding of the effect of this Embodiment. FIG.25( a) is a plan view illustrating the relationship between the patternof the first-level interconnect M1 and the pattern of the second-levelinterconnect M2, while FIG. 25( b) is a cross-sectional view taken alonga line C-C in FIG. 25( a).

Even when the second-level interconnect M2 is disposed as illustrated inFIG. 26 relative to a plurality of the first-level interconnects M1,that are connected with the n⁺ type semiconductor regions 14 (source,drain) and the p⁺ type semiconductor regions 15 (source, drain) viaplugs P1, as illustrated in FIG. 11, the electromigration properties canbe improved. For example, FIG. 11 corresponds to a cross-section takenalong a line D-D in FIG. 26.

As described above, the film thickness C of the barrier film PM2 a onthe bottom of the sidewalls of the contact hole C2 is greater than thefilm thickness B at the center of the bottom (Refer to FIGS. 8 and 14).This film thickness C is determined, for example, by dropping aperpendicular line from the end portion of the shortest distance L,which extends from the bottom corner of the contact hole C2 toward thesurface of the barrier film PM2 a, to the sidewalls of the contact holeC2.

The actual surface of the barrier film, as illustrated in FIG. 15, iscurved at the corner of the bottom of the contact hole C2. Asillustrated in FIG. 16, when the corner of the contact hole C2 iscurved, the above-described shortest distance L can be determined byusing, as a starting point, an intersection of the extended side line ofthe contact hole C2 with the extended bottom line.

By setting the film thickness C so that it is greater than the filmthickness B, a concentration of electrons can be prevented even ifoveretching not greater than the film thickness A is conducted uponformation of the contact hole C2. This effect will be described indetail in the description of Embodiment 3, so that further descriptionis omitted here.

Next, one example of the formation of the barrier film PM2 a and amethod of controlling the film thicknesses A and B will be described.

FIG. 27 is a schematic view of an ion bias sputtering apparatus 101 ofthe type used for the formation of the barrier film PM2 a. Asillustrated in FIG. 27, a substrate 1 (wafer) having a contact hole C2formed therein, which substrate is illustrated in FIG. 3, is held by asupporter St, and alternating voltage Ev is applied (biased). Above thewafer, a target Ta (in this case, a plate made of Ti) exists. Uponformation of the barrier film, the apparatus is placed under apressure-reduced condition, and upon film formation, a gas for producinga discharge, such as argon (Ar) is injected into the apparatus. When avoltage is applied in this argon atmosphere, a glow discharge occurs,and the target Ta of the cathode is bombarded with ions in the plasma soas to displace sputter particles (in this case, Ti particles). Thesedisplaced particles are deposited in the contact hole on the surface ofthe wafer, whereby a barrier film is formed.

FIG. 28 is a graph showing the ratio (A/B) of the film thickness A tothe film thickness B when the substrate bias [a.u.] to be applied to thesubstrate 1 is changed. As illustrated by the line (a) of FIG. 28, thegreater the substrate bias, the greater will be the film thickness ratio(A/B). When the substrate bias is 2 or greater, the film thickness ratio(A/B) becomes 1 or greater, in other words, A≧B. The point B representsa film thickness ratio (A/B) when the film is formed by ordinarilyemployed magnetron sputtering.

Upon film formation, it is preferred that the deposition rate is 50nm/min, the film forming pressure is 0.1 Pa or less, and the filmforming temperature falls within a range of from room temperature to400° C. FIG. 28 is a graph showing the film thickness ratio when thewidth of the interconnect trench HM2 is 0.18 μm and the aspect ratio ofthe contact hole C2 (sum of the interconnect depth and the depth of theconnector portion/diameter of the connector portion) is 2.8.

Thus, by controlling the substrate bias, the film thickness ratio (A/B)can be controlled and conditions permitting adjustment of the filmthickness ratio (A/B) to 1 or greater, as described in this Embodiment,can be selected. The conditions permitting adjustment of the filmthickness ratio (A/B) to 1 or greater vary, depending on the size of theinterconnect or connecting hole.

FIG. 29 is a graph which shows a ratio (C/B) of the film thickness C tothe film thickness B when the substrate bias [a.u.] to be applied to thesubstrate 1 is changed. As illustrated in FIG. 29 by the line (c), thegreater the bias, the greater will be the film thickness ratio (C/B).When the bias is about 3 or greater, the film thickness ratio (C/B)becomes 1 or greater, that is, C≧B. The point d represents a filmthickness ratio (C/B) when the film is formed using ordinarily employedmagnetron sputtering.

In order to satisfy both A≧B and C≧B, film formation must be carried outat a substrate bias of 3 or greater.

FIG. 30 is a graph showing the relationship between a cumulative failure[%] and stress time [a.u.] of a semiconductor integrated circuit devicewhen a barrier film is formed using ordinarily employed magnetronsputtering under the conditions of A≦B and C≦B and when the film isformed under the conditions of A≧B and C≧B in accordance with thisEmbodiment. The line (f) shows the former case of using ordinarilyemployed magnetron sputtering, where A≦B and C≦B, while the line (g)shows the latter case of using the present invention, where A≧B and C≧B.The term “stress time” as used herein means the time during which thesemiconductor integrated circuit device is exposed to extremeconditions, such as high temperature. As illustrated in FIG. 30, asingle digit improvement in the electromigration life can be attained bythe constitution according to this Embodiment.

Next, steps for forming upper-level interconnects (third to fifth-levelinterconnects) over the second-level interconnect M2 will be described.

As illustrated in FIG. 31, an interlayer insulating film TH3 (siliconnitride film TH3 a, silicon oxide film TH3 b, silicon nitride film TH3 cand silicon oxide film TH3 d) is formed over the second-levelinterconnect M2 in a similar manner to that employed for the formationof the interlayer insulating film TH2, and an interconnect trench HM3and contact hole C3 are formed in a similar manner to that employed forthe formation of the interconnect trench HM2 and contact hole C2. Then,as in the barrier film PM2 a, and copper films PM2 g and PM2 c, abarrier film PM3 a and copper films PM3 b and PM3 c are formed, followedby polishing by CMP after heat treatment, whereby a third-levelinterconnect M and a connector portion (plug) P3 between thesecond-level interconnect and the third-level interconnect are formed.In short, the barrier film PM3 a in the contact hole C3 is formed tohave a structure similar to that of the barrier film PM2 a. This meansthat the barrier film PM3 a on the bottom of the contact hole C3 isformed to have a film thickness that increases from the center of thebottom toward the sidewalls, all around the bottom of the contact holeC3.

By forming interlayer insulating films TH4 and TH5, fourth-level andfifth-level interconnects M4 and M5, and connecting portions (plugs) P4and P5 to have similar structures to the interlayer insulating film TH3,third-level interconnect M3 and connector portion (plug) P2,respectively, a five-layer interconnect is formed, as illustrated inFIG. 32. More specifically, in a contact hole C4, through which thefourth-level interconnect M4 and the third-level interconnect M3 areconnected, a barrier film PM4 a on the bottom of the contact hole C4 isformed to have a film thickness that increases from the center of thebottom toward the sidewalls, all around the bottom of the contact holeC4. In a contact hole C5, through which the fifth-level interconnect M5and the fourth-level interconnect M4 are connected, the barrier film PM5a on the bottom of the contact hole C5 is formed to have a filmthickness that increases from the center of the bottom toward thesidewalls, all around the bottom of the contact hole C5. PM4 b and PM5 bare copper films similar to PM3 b and PM2 b, while PM4 c and PM5 c arecopper films similar to PM3 c and PM2 c.

After deposition of a silicon nitride film, to serve as a copperdiffusion preventive film, over the fifth-level interconnect M5, alaminate film PV of a silicon oxide film and a silicon nitride film isdeposited as a protective film.

Although no particular limitation is imposed, the second-levelinterconnect M2 and fourth-level interconnect M4 are formed to extendmainly in the X direction, while the third-level interconnect M3 andfifth-level interconnect M5 are formed to extend mainly in a directionorthogonal to the X direction. With the first-level interconnect M1 tothe fifth-level interconnect M5, MISFETQn and MISFETQp are linked so asto constitute, for example, a logic circuit of a microprocessor.

In this Embodiment, the first-level interconnect is formed from a copperfilm M1 b. As the first-level interconnect, a copper alloy (an alloycontaining, in addition to copper, magnesium (Mg), silver (Ag), platinum(Pt), titanium (Ti), tantalum (Ta) or aluminum (Al)), silver or a silveralloy, gold (Au) or a gold alloy, or aluminum or an aluminum alloy (analloy containing, in addition to aluminum, silicon (Si), copper, niobium(Nb) or titanium) may be used as a main material. In this Embodiment,the first-level interconnect is formed by the damascene method.Alternatively, after deposition of the above-described material over theinterlayer insulating film TH1, it may be patterned into a desired shapeby dry etching.

Embodiment 2

In Embodiment 1, the second-level interconnect M2 and connector portion(plug) 2 are formed by the dual damascene method. Alternatively, thesingle damascene method may be employed, as described below, to formthem. A semiconductor integrated circuit device according to thisEmbodiment of the present invention will be described in accordance withits method of manufacture. FIGS. 33 to 42 are fragmentarycross-sectional or fragmentary plan views of a substrate illustratingthe method of manufacture of a semiconductor integrated circuit deviceaccording to Embodiment 2 of the present invention. Steps up to theformation of the first-level interconnect M1 are similar to those ofEmbodiment 1, which was described with reference to FIGS. 1 and 2, sothat a repeated description thereof is omitted.

As illustrated in FIG. 33, a silicon nitride film TH2 a and a siliconoxide film TH2 b are deposited successively to serve as insulating filmsby CVD over the first-level interconnect M1 and aninterconnect-trench-forming insulating film H1, whereby an interlayerinsulating film TH22 is formed. Of these films, the silicon nitride filmTH2 a functions to prevent diffusion of copper constituting thefirst-level interconnect M1. It is also utilized as an etching stopperupon formation of a contact hole C2, which will be described later.

Over the interlayer insulating film TH22, a resist film (notillustrated) is formed, having an opening in a region in which aconnector portion (plug) is to be formed. Using this resist film as amask, the interlayer insulating film TH22 (silicon nitride film TH2 aand silicon oxide film TH2 b) is etched to form a contact hole C2.

Then, in a similar manner to that employed for the formation of thebarrier film PM2 a in Embodiment 1, a barrier film P2 a is formed.

More specifically, as illustrated in FIGS. 34 and 35, a refractory metalsuch as titanium (Ti) is deposited over the interlayer insulating filmTH22, including the inside of this contact hole C2, to form the barrierfilm P2 a. In this process, the barrier film P2 a on the bottom isformed to have a film thickness that increases from the center of thebottom toward the sidewalls, all around the bottom of the contact holeC2 (refer to FIGS. 5 to 7 in Embodiment 1). The thickness of the barrierfilm at the center of the bottom of the contact hole C2 is B, and thefilm thickness A, which is the thickness of the barrier film at the endportions, in the direction of the sidewalls, of the bottom of thecontact hole C2, is made greater than the film thickness B (A≧B).Moreover, the film thickness C on the bottom of each of the sidewalls ofthe contact hole C2 is made greater than the film thickness B (C≧B).FIG. 34 is an enlarged view of the vicinity of the contact hole C2,which is the right-most one among the contact holes C2, as seen in FIG.33, while FIG. 35 is a partially enlarged view of the bottom of thecontact hole C2 shown in FIG. 34.

As illustrated in FIG. 36, after formation of a copper film P2 b on thebarrier film P2 a by sputtering or CVD to serve as a seed film forelectroplating, a copper film P2 c is formed as a conductive film overthe copper film P2 b by electroplating.

The copper films P2 b and P2 c are heat treated, followed by removal ofthe copper films P2 b and P2 c and barrier film P2 a outside the contacthole C2 by CMP so as to form a connector portion (plug) P2 between thefirst-level interconnect M1 and the second-level interconnect M2, asillustrated in FIG. 37. FIG. 38 and FIG. 40 are enlarged views of thevicinity of a contact hole C2, which is the right-most one among thethree contact holes C2 as seen in FIG. 37. FIG. 39 is a fragmentary planview of the substrate shown in FIG. 38 and FIG. 40. FIG. 38 correspondsto a A-A cross-section of FIG. 39, while FIG. 40 corresponds to a B-Bcross-section of FIG. 39. As illustrated therein, the connector portion(plug) P2 has a similar constitution to that of the connector portion(plug) P2 described with reference to Embodiment 1.

As illustrated in FIG. 41, over the interlayer insulating film TH22 andplug P2, a silicon nitride film TH2 and a silicon oxide film TH2 d,serving as insulating films, are deposited successively by CVD to forman interconnect-trench-forming insulating film H22. Of these films, thesilicon nitride film TH2 c serves as an etching stopper upon formationof an interconnect trench HM2, which will be described later.

Over the interconnect-trench-forming insulating film H22, a resist film(not illustrated) is formed, having an opening in a region in which asecond-level interconnect is to be formed. Using this resist film as amask, the interconnect-trench-forming insulating film H2 (silicon oxidefilm TH2 d and silicon nitride film TH2 c) is etched to form theinterconnect trench HM2.

Over the interlayer insulating film TH2, including the inside of theinterconnect trench HM2, a refractory metal, for example, Ti (titanium),is deposited to form a barrier film M2 a.

After formation of a copper film M2 b over the barrier film M2 a bysputtering or CVD to serve as a seed film for electroplating, a copperfilm M2 c is formed thereover to serve as a conductive film byelectroplating.

The copper films M2 b and M2 c are heat treated, followed by removal ofthe copper films 2 b and M2 c and the barrier film M2 a outside theinterconnect trench HM2 by CMP to form the second-level interconnect M2.

By repeating the formation of interlayer insulating films (TH23 toTH25), connector portions (P3 to P5), interconnect-trench-forminginsulating films (H23 to H25) and interconnects (M3 to M5), a five-layerinterconnect is formed, as illustrated in FIG. 42. They are formed in asimilar manner to those employed for the formation of the interlayerinsulating film TH2, connecting portion (plug) P2,interconnect-trench-forming insulating film H22, and second-levelinterconnect M2.

After formation of a silicon nitride film, to serve as a copperdiffusion preventive film, over the fifth-level interconnect M5, as inEmbodiment 1, a laminate film PV of a silicon oxide film and a siliconnitride film is formed by deposition to serve as a protective film. Bythis, the barrier films P3 a, P4 a and P5 a on the bottoms of thecontact holes C3, C4 and C5 are each formed to have a film thicknessthat increases from the center of the bottom toward the sidewalls, allaround the bottom of the contact hole as in Embodiment 1.

According to this Embodiment, the barrier film P2 a on the bottom of thecontact hole C2 is formed so that its thickness increases from thebottom of the contact hole toward its sidewalls, as described inEmbodiment 1. The geometrically shortest route of an electric currentfrom the second-level interconnect M2 to the first-level interconnectM1, therefore does not cross over a thin portion (a portion whoseelectric resistance becomes the lowest) of the barrier film, whereby aconcentration of electrons to this portion can be prevented. As aresult, the electromigration properties can be improved.

By setting the film thickness C to be greater than the film thickness B,a concentration of electrons can be prevented even if overetching notgreater than the film thickness A is conducted upon formation of thecontact hole C2.

Embodiment 3

The semiconductor integrated circuit device according to this Embodimentof the present invention will be described in accordance with itsmanufacturing process.

FIGS. 43 to 51 are fragmentary cross-sectional or fragmentary plan viewsof a substrate for illustrating the manufacturing process of thesemiconductor integrated circuit device according to Embodiment 3 of thepresent invention. Since the steps up to the formation of thefirst-level interconnect M1 are similar to those employed for Embodiment1, which steps were described with reference to FIGS. 1 and 2, arepeated description of them is omitted.

As illustrated in FIG. 43, a silicon nitride film TH2 a, a silicon oxidefilm TH2 b, a silicon nitride film TH2 c and a silicon oxide film TH2 dare deposited successively by CVD to serve as an insulating film overthe first-level interconnect M1 and interconnect-trench-forminginsulating film H1, whereby an interlayer insulating film TH2 is formed.Of these films, the silicon nitride film TH2 a has a function ofpreventing diffusion of copper constituting the first-level interconnectM1. It is also utilized as an etching stopper upon formation of acontact hole C2, which will be described later. The silicon nitride filmTH2 c serves as an etching stopper upon formation of an interconnecttrench HM2, which will be described later.

Over the interlayer insulating film TH2, a resist film (not illustrated)is formed, that is opened at a region in which a second interconnect isto be formed. Using this resist film as a mask, the silicon oxide filmTH2 d and silicon nitride film TH2 c are etched from the interlayerinsulating film TH2 to form the interconnect trench HM2.

Over the interlayer insulating film TH2, including the inside of theinterconnect trench HM2, a first resist film (not illustrated) isdeposited. The interconnect trench HM2 is embedded with the first resistfilm by etch back. A second resist film (not illustrated), that isopened at a connecting region of the first-level interconnect with thesecond-level interconnect, is then formed over the first resist film.Using this second resist film as a mask, the first resist film, siliconoxide film TH2 b and silicon nitride film TH2 a are etched, whereby thecontact hole (C2) is formed. As described with reference to Embodiment1, the interconnect trench HM2 may be formed after the formation of thecontact hole C2.

If overetching is conducted upon formation of this contact hole C2, thebottom of the contact hole C2 comes at a position deeper than thesurface of the first-level interconnect M1 as illustrated in FIG. 43.

As illustrated in FIG. 44, a refractory metal such as Ti (titanium), isdeposited over the interlayer insulating film TH2, including the insidesof the contact hole C2 and interconnect trench HM2, whereby a barrierfilm PM2 a is formed. The barrier film PM2 a is formed to have thebelow-described structure.

FIGS. 45 and 47 are each an enlarged view of the vicinity of the contacthole C2 shown in FIG. 44. FIG. 46 is a fragmentary plan view of thesubstrate illustrated in FIGS. 45 and 47. FIG. 45 illustrates a A-Across-section of FIG. 46, while FIG. 47 corresponds to a B-Bcross-section of FIG. 46. As illustrated in FIGS. 45 and 47, the barrierfilm PM2 a is formed along the bottom and sidewalls of the interconnecttrench HM2 or contact hole C2.

In the contact hole C2, the barrier film PM2 a on the bottom thereof isformed so that its film thickness increases from the center of thebottom of the contact hole C2 toward the sidewalls, all around thebottom of the contact hole C2. As illustrated in FIG. 48, which is apartially enlarged view of the bottom of the contact hole C2 shown inFIG. 47, the thickness of the barrier film at the center of the bottomof the contact hole C2 is B, and the film thickness A, which is athickness on the end portion, in the direction of the sidewall, of thebottom of the contact hole C2 is made greater than the film thickness B(A≧B). The barrier film on the sidewalls increases in thickness from aportion above a position contiguous to the surface F of the first-levelinterconnect M1 toward the bottom of the contact hole C2. The filmthickness E of the barrier film PM2 a, that is contiguous to the surfaceF of the first-level interconnect M1, is the thickness on the sidewall,and it is greater than the film thickness B (E≧B).

As illustrated in Embodiment 1, the film thickness B or the filmthickness D of the barrier film on the sidewalls of the contact hole C2must be adjusted to at least the minimum thickness permittingmaintenance of barrier properties.

As illustrated in FIG. 49, after formation of a copper film PM2 b overthe barrier film PM2 a by sputtering or CVD to serve as a seed film forelectroplating, a copper film PM2 c is formed, to serve as a conductivefilm, over the copper film PM2 b by electroplating.

After heat treatment of the copper films PM2 b and PM2 c, the copperfilms PM2 b,PM2 c and barrier film PM2 a outside the interconnect HM2and contact hole C2 are removed by CMP to form a second-levelinterconnect M2 and a connector portion (plug) P2 between thefirst-level interconnect and the second-level interconnect. FIGS. 50 and51 are enlarged views of the vicinity of the contact hole C2 shown inFIG. 49. FIGS. 50 and 51 correspond to the A-A cross-section and B-Bcross-section of FIG. 46, respectively.

The essential points in the structure of the second-level interconnectM2, connector portion (plug) and first-level interconnect M1 will bedescribed.

The second-level interconnect M2 and connector portion (plug) P2 areeach made of the copper films PM2 b, PM2 c and barrier film PM2 a. Asillustrated in FIG. 50, the second-level interconnect M2 extends to theleft side, starting from the connector portion (plug) 2, while thefirst-level interconnect M1 extends to the right side, starting from theconnector portion (plug) P2.

As described above, the barrier film PM2 a on the bottom of the contacthole C2 increases in thickness from the center of the bottom toward thesidewalls. In other words, the barrier film PM2 a has a portion thatdeclines toward the center of the bottom from the sidewalls of thecontact hole C2. The film thickness B of the barrier film on the centerof the bottom of the contact hole C2 is smaller than the film thicknessA, which is the film thickness at an end portion, in the direction ofsidewalls, of the bottom of the contact hole C2 (A≧B). The filmthickness A can be determined, for example, by dropping a perpendicularline toward the bottom of the contact hole C2 from the end of theshortest distance L between the corner of the bottom of the contact holeC2 to the surface of the barrier film.

The actual surface of the barrier film is, as illustrated in FIG. 15,curved at the corner of the bottom of the contact hole. When the contacthole has a curved corner, as illustrated in FIG. 16, the above-describedshortest distance L can be determined by using, as a starting point, theintersection between the extended side line and extended bottom line ofthe contact hole C2.

The connector portion (plug) P2 has a bottom at a position deeper by anoveretching amount OE from the surface F of the first-level interconnectM1, and the film thickness E of the barrier film PM2 a, at a portioncontiguous to the surface F of this first-level interconnect M1, isgreater than the film thickness B (refer to FIG. 48).

According to this Embodiment, the film thickness E is greater than thefilm thickness B, so that the geometrically shortest route Ru1 (refer toFIG. 52), when an electric current flows from the second-levelinterconnect M2 toward the first-level interconnect M1, does not crossover a thin portion of the barrier film at which the electric resistancebecomes the lowest.

According to this Embodiment, the geometrically shortest route ofelectric current from the second-level interconnect M2 to thefirst-level interconnect M1 does not coincide with a thin portion of thebarrier film PM2 a at which the electrical resistance becomes lowest, sothat the current route can be dispersed. Accordingly, a concentration ofelectrons (e) does not occur easily, even if overetching occurs uponformation of the contact hole C2, making it possible to improve theelectromigration properties.

As described in Embodiment 1, when the barrier film has some variationsin its thickness inside of the contact hole (refer to FIG. 19), and,moreover, when overetching occurs upon formation of the contact hole C2,the geometrically shortest route (route Ru1) of an electric currentcrosses over the sidewalls of the barrier film PM2 a′, as illustrated inFIG. 52.

When the thickness of the barrier film contiguous to the surface of thefirst-level interconnect M1 is smaller than that on the bottom of thecontact hole, the geometrically shortest route of an electric currentcoincides with a thin portion of the barrier film PM2 a whose electricalresistance becomes the lowest, which causes a concentration of electrons(e), and deteriorates the electromigration properties.

In this Embodiment, on the other hand, when the film thickness E of thebarrier film, which is contiguous to the surface F of the first-levelinterconnect M1, is set to be greater than the film thickness B, theabove-described effect is available.

In similar a manner to that employed for the formation of thesecond-level interconnect M2 and connector portion (plug) P2,third-level to fifth-level interconnects M3 to M5 and connector portions(plugs) P1 to P5 are then formed. However, illustrations and a detaileddescription thereof will be omitted.

In this Embodiment, the second-level interconnect M2 and connectorportion (plug) 2 were formed using the dual damascene method.Alternatively, the second-level interconnect M2 and connector portion(plug) 2 were formed by separate steps by using the single damascenemethod, as described with reference to Embodiment 2. Also, in this case,the above-described effect is available by setting the film thickness Eof the barrier film PM2 a in the connector portion (plug) to be greaterthan the film thickness B.

The present invention has been described specifically on the basis ofvarious Embodiments. However, the present invention is not limited bythese Embodiments, but can be modified to an extent not departing fromthe gist of the invention.

For example, MISFETQn and MISFETQp were given as examples of asemiconductor element. Not only a MISFET, but also another element, suchas bipolar transistor, can be formed.

Effects available by the typical aspects of the invention, among thefeatures disclosed by the present application, will be described brieflybelow.

(1) A conductive film on the bottom and sidewalls of a hole made in aninsulating film formed over a semiconductor substrate is formed so thatits thickness increases from the center of the hole toward the sidewalls, whereby the geometrically shortest route of an electric currentin the hole does not coincide with a thin portion of the conductive filmat which the electrical resistance becomes the lowest, which makes itpossible to disperse the route of electrical current.

By such a constitution, a concentration of electrons does not occurreadily, and the electromigration properties can be improved. Moreover,the characteristics of a semiconductor integrated circuit device havingsuch a conductive film can be improved.

As a result, the yield of the product can be heightened, and its life(electromigration life) can be prolonged.

(2) When the bottom of the hole exists at a position deeper than thesurface of the interconnect extending therebelow, a conductive film onthe bottom and sidewalls is formed so that the film thickness E of theconductive film that is contiguous to the surface of the interconnectbecomes greater than the film thickness B. The geometrically shortestroute of an electrical current in the hole, therefore, does not coincidewith a thin portion of the conductive film at which the electricalresistance becomes the lowest, which makes it possible to disperse theroute of the electrical current.

By such a constitution, a concentration of electrons does not occurreadily, and the electromigration properties can be improved. Moreover,the characteristics of a semiconductor integrated circuit device havingsuch a conductive film can be improved.

As a result, the yield of the product can be heightened, and its life(electromigration life) can be prolonged.

1. A semiconductor integrated circuit device, comprising: a firstinsulating film formed over a semiconductor substrate; a first wiringformed in the first insulating film; a second insulating film formedover the first wiring; a third insulating film formed over the secondinsulating film; a hole formed in the second and third insulating filmsto connect to the first wiring; a first conductive film formed over thebottom and sidewalls of the hole, wherein the first conductive film hasa barrier function to a copper film; and a second conductive film formedover the first conductive film so that the second conductive film isembedded in the hole, and the second conductive film is formed of acopper film or a film of a copper alloy and is formed of differentmaterial from the first conductive film; wherein the hole has a portionformed in the first wiring, wherein the thickness of the firstconductive film at the center of the bottom of the hole is smaller thanthe portion of the hole formed in the first wiring, measured as a heightdistance from an outer surface of the first wiring to the bottom of thehole, wherein the width of the second conductive film formed under theouter surface of the first wiring is smaller than the width of thesecond conductive film formed over the outer surface of the firstwiring, wherein the width of the second conductive film is decreasingcontinuously toward the bottom of the hole from an outer surface of thesecond insulating film, and wherein a rate of decrease in the secondconductive film formed under the outer surface of the first wiring islarger than a rate of decrease in the second conductive film formed overthe outer surface of the first wiring.
 2. A semiconductor integratedcircuit device according to the claim 1, wherein the thickness of thefirst conductive film on the sidewalls of the hole is larger than thethickness of the first conductive film at the center of the bottom ofthe hole.
 3. A semiconductor integrated circuit device according to theclaim 1, wherein the first conductive film has an upwardly sloping filmthickness thereof from the center of the bottom of the hole toward thesidewalls of the hole all around a region defining the bottom of thehole.
 4. A semiconductor integrated circuit device according to theclaim 1, wherein the first conductive film has a declining portiondeclining from the sidewalls toward the center of the bottom of the holeall around a region defining the bottom of the hole.
 5. A semiconductorintegrated circuit device according to the claim 1, wherein the firstconductive film is made of tantalum, tantalum nitride, titanium,titanium nitride, tungsten, tungsten nitride, titanium silicide nitrideor tungsten silicide nitride, or an alloy thereof, or a laminate filmthereof.
 6. A semiconductor integrated circuit device, comprising: afirst insulating film formed over a semiconductor substrate; a firstwiring formed in the first insulating film; a second insulating filmformed over the first wiring; a third insulating film formed over thesecond insulating film; a hole formed in the second and third insulatingfilms to connect to the first wiring; a first conductive film formedover the bottom and sidewalls of the hole, wherein the first conductivefilm has a barrier function to a copper film; and a second conductivefilm formed over the first conductive film so that the second conductivefilm is embedded in the hole, and the second conductive film is formedof a copper film or a film of a copper alloy and is formed of differentmaterial from the first conductive film; wherein the hole has a depthsuch that a portion of the hole is formed in the first wiring, whereinthe width of the second conductive film formed under an outer surface ofthe first wiring is smaller than the width of the second conductive filmformed over the outer surface of the first wiring, wherein the width ofthe second conductive film is decreasing continuously toward the bottomof the hole from an outer surface of the second insulating film, andwherein a rate of decrease in the second conductive film formed underthe outer surface of the first wiring is larger than a rate of decreasein the second conductive film formed over the outer surface of the firstwiring.
 7. A semiconductor integrated circuit device according to theclaim 6, wherein the thickness of the first conductive film on thesidewalls of the hole is larger than the thickness of the firstconductive film at the center of the bottom of the hole.
 8. Asemiconductor integrated circuit device according to the claim 6,wherein the first conductive film has an upwardly sloping film thicknessthereof from the center of the bottom of the hole toward the sidewallsof the hole all around a region defining the bottom of the hole.
 9. Asemiconductor integrated circuit device according to the claim 6,wherein the first conductive film has a declining portion declining fromthe sidewalls toward the center of the bottom of the hole all around aregion defining the bottom of the hole.
 10. A semiconductor integratedcircuit device according to the claim 6, wherein the first conductivefilm is made of tantalum, tantalum nitride, titanium, titanium nitride,tungsten, tungsten nitride, titanium silicide nitride or tungstensilicide nitride, or an alloy thereof, or a laminate film thereof.
 11. Asemiconductor integrated circuit device, comprising: a first insulatingfilm formed over a semiconductor substrate; a first wiring formed in thefirst insulating film; a second insulating film formed over the firstwiring; a third insulating film formed over the second insulating film;a hole formed in the second and third insulating films to connect to thefirst wiring; a first conductive film formed over the bottom andsidewalls of the hole, wherein the first conductive film has a barrierfunction to a copper film; and a second conductive film formed over thefirst conductive film so that the second conductive film is embedded inthe hole, and the second conductive film is formed of a copper film or afilm of a copper alloy and is formed of different material from thefirst conductive film; wherein the hole is extended such that a bottomthereof is formed in the first wiring, wherein the thickness of thefirst conductive film at the center of the bottom of the hole is smallerthan an amount of the first wiring removed to extend the hole therein,the amount of the first wiring removed being measured as a heightdistance from an outer surface of the first wiring to the bottom of thehole, wherein the width of the second conductive film formed under theouter surface of the first wiring is smaller than the width of thesecond conductive film formed over the outer surface of the firstwiring, wherein the width of the second conductive film is decreasingcontinuously toward the bottom of the hole from an outer surface of thesecond insulating film, and wherein a rate of decrease in the secondconductive film formed under the outer surface of the first wiring islarger than a rate of decrease in the second conductive film formed overthe outer surface of the first wiring.
 12. A semiconductor integratedcircuit device according to the claim 11, wherein the thickness of thefirst conductive film on the sidewalls of the hole is larger than thethickness of the first conductive film at the center of the bottom ofthe hole.
 13. A semiconductor integrated circuit device according to theclaim 11, wherein the first conductive film has an upwardly sloping filmthickness thereof from the center of the bottom of the hole toward thesidewalls of the hole all around a region defining the bottom of thehole.
 14. A semiconductor integrated circuit device according to theclaim 11, wherein the first conductive film has a declining portiondeclining from the sidewalls toward the center of the bottom of the holeall around a region defining the bottom of the hole.
 15. A semiconductorintegrated circuit device according to the claim 11, wherein the firstconductive film is made of tantalum, tantalum nitride, titanium,titanium nitride, tungsten, tungsten nitride, titanium silicide nitrideor tungsten suicide nitride, or an alloy thereof, or a laminate filmthereof.
 16. A semiconductor integrated circuit device according toclaim 12, wherein the first conductive film is made of tantalum,tantalum nitride, titanium, titanium nitride, tungsten, tungstennitride, titanium silicide nitride or tungsten silicide nitride, or analloy thereof, or a laminate film thereof.
 17. A semiconductorintegrated circuit device according to claim 13, wherein the firstconductive film is made of tantalum, tantalum nitride, titanium,titanium nitride, tungsten, tungsten nitride, titanium silicide nitrideor tungsten silicide nitride, or an alloy thereof, or a laminate filmthereof.
 18. A semiconductor integrated circuit device according toclaim 14, wherein the first conductive film is made of tantalum,tantalum nitride, titanium, titanium nitride, tungsten, tungstennitride, titanium silicide nitride or tungsten silicide nitride, or analloy thereof, or a laminate film thereof.